RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR JUNCTION MIXER DIODES FOR COUNTERMEASURES EQUIPMENT.
Abstract
Microplanar and micromesa tunnel diodes for X-band application were fabricated in both germanium and silicon. The most practical approach to the goal of low noise and high resistance to burnout is the germanium micromesa structure, modified to reduce the mesa to a height equal to the alloy depth in the microplanar structure. The germanium micromesa structure has unity noise-temperature ratio and a burnout resistance greater than 6 ergs, with over 20 ergs for many diodes. Noise figures of 8 to 9 db are readily attained. An aluminumalloyed germanium micromesa structure with thermocompression-bonded contacts promises a higher temperature operating capability and greater resistance to burnout. Experiments with silicon included structures formed by local alloying, local epitaxial deposition, or alloying and etching. A ridged waveguide-to-coaxial mount for 7 - 11 Gc broadband operation was designed and fabricated. VSWR was designed at 1.2. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1964
- Accession Number
- AD0600555