500 WATT SILICON POWER TRANSISTOR.

Abstract

Physical models, evaluation methods and electrical measurements of secondary breakdown are presented. Design calculations and experimental results demonstrating high voltage capability and feasibility of fabrication are discussed. A detailed encapsulation design is presented. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1964
Accession Number
AD0600680

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coatings
  • Electrical Measurement
  • Encapsulation
  • Fabrication
  • High Voltage
  • Measurement
  • Microcapsules
  • Test And Evaluation
  • Transistors
  • Voltage

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Semiconductor Device Technology
  • Systems Analysis and Design