CAPACITANCE-VOLTAGE DEPENDENCE OF ZINCDIFFUSED GAAS P-N JUNCTIONS.
Abstract
The capacitance-voltage behavior of zinc-diffused GaAs p-n junctions indicates a severe non-linearity of the impurity distribution near the junction. This is probably due to the nonFickian nature of zinc diffusion in GaAs. The capacitance of zinc-diffused GaAs p-n junctions varies as Coc V .1/n where the n values range from 2, as for an abrupt junction, to 3, as for a linear gradient junction. The capacitance-voltage relations for two assumed zinc profiles are calculated and compared with experimental results. A linear gradient on the p-side and a constant donor concentration equal to the starting donor concentration on the n-type side are found to be a good approximation of the actual impurity distribution at a zincdiffused p-n junction. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1964
- Accession Number
- AD0600696
Entities
People
- D. F. Kyser
- L. W. Aukerman
- M. F. Millea
Organizations
- The Aerospace Corporation