THE PREPARATION AND PROPERTIES OF THIN FILMS OF SEMICONDUCTORS.

Abstract

Thin films of InSb were prepared by the vacuum evaporation of the compound onto glass substrates. Irreversible changes which took place in the electrical conductivity and Hall coefficient during film annealings, and differences between the diffraction patterns of annealed and unannealed films were examined in detail. Surface replicas of both annealed and unannealed films were photomicrographed. Galvanomagnetic properties of annealed films -- notably the temperature dependence of the conductivity, the Hall coefficient, and the mobility -- were compared with the same properties in bulk material. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1964
Accession Number
AD0600725

Entities

People

  • Allen Behle
  • E. Brock Dale
  • Fred K. Wong
  • Gerard Senecal

Organizations

  • Kansas State University

Tags

DTIC Thesaurus Topics

  • Bulk Materials
  • Coefficients
  • Conductivity
  • Electrical Conductivity
  • Films
  • Materials
  • Semiconductors
  • Thin Films
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene