DIODE, MILLIMETER WAVE TYPE MIXER (3.2MM).
Abstract
Epoxy bonding of point contact diode junctions is described. Results are presented on the conversion loss and crystal noise ratio of gallium arsenide point contact diodes at 94 Gc with intermediate frequencies of .750, 2.15, and 2.80 Gc. The best conversion loss obtained is 4.7 db with a crystal noise ratio (IF = 2.8G) of approximately 1.6. A promising technique of anticipating mixer performance is described using a diode's dual I-V curve trace. Both RF and IF impedance data are presented over relatively large frequency ranges. The design features of a new 94 Gc mixer mount are outlined. Efforts are described for pulse forming gallium arsenide and germanium tunnel diodes to be used as mixers. To date the semiconductor materials have not been as heavily doped as required. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 30, 1964
- Accession Number
- AD0600769
Entities
People
- J. W. Dozier
- R. J. Bauer