INVESTIGATION OF ULTRA HIGH VACUUM SPUTTERED THIN FILMS.

Abstract

The initial results of an investigation into the application of rigidly controlled low pressure sputtering techniques to the formation of thin semiconductor films are presented. A unique sputtering chamber has been developed which allows simultaneous deposition on two substrates whose temperatures are controlled independently. Structural and electrical properties of germanium films deposited on quartz and self-substrates are presented. One of the most significant structural factors is the observance of epitaxy at temperatures below 200 C. Hall coefficient, resistivity, and mobility data for germanium on quartz films closely resembles that of other workers. Electrical measurements were also made on an amorphous n-type film. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1964
Accession Number
AD0600799

Entities

People

  • S. P. Wolsky

Tags

DTIC Thesaurus Topics

  • Coefficients
  • Compound Semiconductors
  • Electrical Measurement
  • Electrical Properties
  • Electronics
  • Films
  • Germanium
  • High Vacuum
  • Measurement
  • Mobility
  • Semiconductors
  • Solid State Electronics
  • Sputtering
  • Substrates
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene