DETAILED STUDY OF DELETERIOUS EFFECTS ON SILICON TRANSISTORS.

Abstract

Deleterious surface phenomena such as junction leakage current, junction breakdown voltage, current gain degradation, etc. observed on n-p-n. p-n-p silicon transistors insulated gate unipolar field effects transistors and surface controlled bipolar transistors are described in detail. The models fitting the surface phenomena observed are presented. Also brief discussion of application of surface phenomena are included. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1964
Accession Number
AD0600875

Entities

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Bipolar Junction Transistors
  • Degradation
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Transistors

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics