CARRIER LIFETIME IN INSB AT HIGH CARRIER DENSITIES.

Abstract

It has recently become possible to inject electrons and holes into InSb at high densities. Lifetimes much larger than the small density values have been observed. In order to gain information about the dominant recombination mechanism at low temperatures the photon radiative lifetime was computed as a function of temperature. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1963
Accession Number
AD0600974

Entities

People

  • R. W. Cunningham

Organizations

  • Boeing

Tags

DTIC Thesaurus Topics

  • Charged Particles
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Fermions
  • High Density
  • Low Temperature

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Statistical inference.

Technology Areas

  • Microelectronics