AN L-BAND TUNNEL DIODE OSCILLATOR.
Abstract
A standard process for fabricating 600 ma gallium arsenide tunnel diodes was evolved. A simplified rf circuit was developed which simplifies packaging in a small volume. A new transistor current regulator for TDOs was given preliminary test. The major objective is improved operation over a wide ambient temperature range. A transistor modulator for FM modulating the TDO was fabricated. The unit meets the required pulse width and repetition frequency for the specified values of control resistance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 29, 1964
- Accession Number
- AD0601061
Entities
People
- D. E. Nelson
- E. T. Casterline
- R. Gold