DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATION.

Abstract

Experiments were carried out in conjunction with the study of arsine doping, CO2 in situ oxide film growth, and oxidemasked growth. The furnace with rotating susceptor was re evaluated with much more favorable results than previously obtained. Capacitance probe measurement has proven a very valuable technique, useful for the study of layer doping profile, isolation junctions and back diffusion in epitaxial layers for digital circuits has been obtained, and a preliminary study was conducted on the requirements of epitaxial layers for linear circuits. A separate but smaller effect on silicon thin film deposition on ceramic substrates was made, with no major technical breakthroughs in sight. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1964
Accession Number
AD0601343

Entities

People

  • B. Selikson
  • Pingshan Wang
  • R. Berkstresser

Organizations

  • Sylvania Electric Products

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Circuits
  • Diffusion
  • Digital Circuits
  • Films
  • Measurement
  • Microelectronics
  • Oxide Films
  • Oxides
  • Substrates
  • Thin Films

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene