THE IMPROVEMENT OF PRODUCTION TECHNIQUES TO INCREASE THE RELIABILITY OF DIFFUSED SILICON CONTROLLED SWITCHES TYPES 2N689.

Abstract

This report covers the work performed on the device package, the all-diffused silicon controlled rectifier subassembly, the determination of consequences upon electrical behavior of dislocation-impurity interaction in all-diffused silicon, and the results of blocking voltage step-stress tests conducted on the present alloy-diffused product. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1964
Accession Number
AD0601442

Entities

People

  • A. Hishta
  • H. Wawrousek
  • J. N. Frank
  • R. C. Rome
  • W. R. Comstock

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Dislocations
  • Electronic Equipment
  • Impurities
  • Power Converters
  • Production
  • Rectifiers
  • Reliability
  • Silicon Controlled Rectifiers
  • Stress Tests

Readers

  • Electrical Engineering
  • Software Engineering