VAPOR DEPOSITED BORIDES OF GROUP IVA METALS.
Abstract
The formation of vapor deposited TiB2, ZrB2 and HfB2 at 1400C was studied with respect to the influence of process variables on structure and stoichiometry. Stoichiometric, non-porous deposits of TiB2 were obtained; ZrB2 and HfB2 deposits contained beta rhombohedral boron. Precision lattice parameters were determined for all three diborides. The effect of co-deposited boron on these parameters appears to be slight. A small degree of preferred orientation existed in materials made under these conditions which indicates that crystallites tend to be deposited with c axes parallel to the substrate. Grain size, orientation, porosity and stoichiometry are all influenced and therefore should be controllable by process variation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1964
- Accession Number
- AD0601861
Entities
People
- J. J. Gebhardt
- R. F. Cree
Organizations
- General Electric