PRODUCTION ENGINEERING MEASURE. ITEM 9 SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336.

Abstract

Presented are the improved passivation and encapsulation techniques as well as the evaluation of the effectiveness of these techniques, the reliability estimate as a function of stress and a multi-level high reliability specification which characterizes the device for high reliability applications. The expected failure rate, at the upper 90% confidence limit as extrapolated using least square techniques and the Arrhenius failure model, is shown to be 0.01% per 1000 hours operation at 235 mw at 25C ambient temperature. As a result of this work a multi-level high reliability device specification has been written about this production line. This specification and the qualification testing to it are included in this report. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1964
Accession Number
AD0601889

Entities

People

  • P. W. Olski

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Confidence Limits
  • Encapsulation
  • Engineering
  • High Reliability
  • Performance (Engineering)
  • Production
  • Production Engineering
  • Production Management Methods
  • Productivity
  • Qualifications
  • Reliability
  • Specifications
  • Test And Evaluation
  • Transistors

Fields of Study

  • Engineering

Readers

  • Mathematics or Statistics
  • Semiconductor Device Technology
  • Software Engineering