PRODUCTION ENGINEERING MEASURES TO INCREASE TRANSISTOR RELIABILITY. PROCESS SPECIFICATIONS. 2N744 SERIES.

Abstract

Process specifications and methods for the manufacture of transistors of increased reliability are outlined. Topics in the report include: (1) HCL etching of epitaxial substrates; (2) measuring silicon epitaxial film thickness, I. R. Spectrophotometer method; (3) measuring silicon epitaxial resistivity; (4) cleaning slices, silicon organic removal, Walking Beam Machine method; (5) depositing (Boron B203 Box) slices, silicon planar; (6) operating dryer system, Kemp model 15 EM-1; (7) depositing (ammonium phosphate emitter) slices, silicon planar; (8) purifying KMER, silicon transistors; (9) cleaning and drying (prephoto resist) slices, silicon; (10) exposing photo resist coated slices; (11) developing slices, silicon (exposed, KMER coated); (12) mixing solution, Bell Etch No. 2-A; (13) metalizing (gold collector) slice, silicon planar; (14) alloying contacts (infrared) silicon; and (15) Header-TO-18.025 Post.

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1964
Accession Number
AD0601955

Entities

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Engineering
  • Production
  • Production Engineering
  • Production Management Methods
  • Productivity
  • Reliability
  • Specifications
  • Spectrophotometers
  • Substrates
  • Thickness
  • Transistors

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.