RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR DIODES FOR ELECTRONIC TUNING.
Abstract
The guard-ring structure offers significant advantages over the double-epitaxial-layer structure. Using the guard-ring structure, plus processing changes to lower the electrical field at the periphery of the junction, has resulted in a significant increase in the level of breakdown voltage attained in diodes. The feasibility of fabricating large-area planar sili con diodes which meet all of the objective electrical specifications for Devices A and B has been conclusively established. Because of the inherent advantages of the planar process, diodes made by this refined planar process are superior to devices made by other technologies. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 26, 1964
- Accession Number
- AD0602027