THIN FILM ACTIVE DEVICES.
Abstract
A semiquantitative analysis was performed of methods of collection of hot electrons at an internal potential barrier. It was shown that such collection may be unlikely for electrons injected by any but Schottky barrier emitter, and that even this type of emission is not too promising. An experiment was devised to confirm the above analysis of hot electron collection. This experiment involved studying the transmission through thin metal films of low energy electrons from an electron gun. A study of fabrication techniques for the production of thin layers of aluminum oxide was conducted to develop tunnel junctions and insulating layers. Thermal oxidation of aluminum was found to be unsatisfactory because of the high incidence of shorts. Reactive evaporation of aluminum in an oxygen atmosphere gave best results if the oxygen pressure and deposition rate were controlled. The study of gaseous anodization was just begun, but preliminary results indicate it is quite useful for certain applications. A study was conducted of the feasibility of a controlled tunnelemission triode. The complexity of the problem prevented a complete analytical treatment, but it was shown that the crucial problem was the maintenance of the required high input impedance while still controlling tunnel emission. The experimental phase of the program was seriously hindered by lack of suitable control over the geometry of the edges used in this structure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 20, 1964
- Accession Number
- AD0602043
Entities
People
- James P. Spratt