BEHAVIOR OF SOLIDS UNDER PRESSURE.

Abstract

The pressure dependence of the electrical conductivity of Ag2HgI4 was investigated. The resistance of VO2 through the semiconductor-to-metal transition was measured as a function of hydrostatic pressure. The transition was studied in pure and partially hydrated single crystals of VO2 and in powdered VO2. Finally, a high pressure microwave cavity for use in magnetic resonance was investigated. A sapphire cone terminated at the large end with a metallic sample served simultaneously as a pressure seal and the resonant structure for a 1 cm magnetic resonance spectrometer.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1964
Accession Number
AD0602044

Entities

People

  • A. W. Lawson

Organizations

  • University of California, Riverside

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Conductivity
  • Electrical Conductivity
  • High Pressure
  • Hydrostatic Pressure
  • Magnetic Resonance
  • Pressure Seals
  • Resonance
  • Semiconductors
  • Single Crystals
  • Transitions

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene