RADIATIVE INTERCONNECTIONS OF SOLID STATE CIRCUIT ARRAYS.
Abstract
The wavelength response of several GaAs p-n emitters was measured at room temperature. The peak response was approximately 9050A, as expected. The results of measurements of the quantum efficiency of emitters, with use of both the old and new starting marterials, are presented. The results of quantum efficiency measurements with application of another measuring technique (integrating sphere) are presented and discussed. Directionality measurements are presented and discussed. Photoconductors in general are discussed and three basic models are analyzed, and compared with each other and with currently available phototransistors. Elementary design considerations for photoconductors are presented. Curently used photodetector fabrication methods are given and a new type of detector is shown. A microcircuit functin was selected and micro-logic was obtained; the circuit was built, and it was successfully demonstrated that a radiative interconnection channel can be made to work at room temperature with no special coupling media, with modest gain requirements. A discussion of this, along with photoconductor-transistor amplifier design considerations, is presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1964
- Accession Number
- AD0602086
Entities
People
- G. C. Gerhard
- G. E. Claflin
- H. A. Jensen
- J. R. Barrett
- S. W. Ing Jr.
Organizations
- General Electric