A FUNDAMENTAL STUDY OF EPITAXY BY FLASH EVAPORATION.

Abstract

A study was made of the impurity doping of flash evaporated epitaxial films of III- V semiconductors. Homo- and heterojunctions were prepared and their electrical character istics determined. The germanium - germanium epitaxial system was studied so that certain parameters involved in 'in situ' doping by flash evaporation could be determined more readily. An investigation was made of the direct and indirect epitaxy of compound semiconductors on mica substrates. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 30, 1964
Accession Number
AD0602442

Entities

People

  • John L. Richards

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Evaporation
  • Germanium
  • Heterojunctions
  • Impurities
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Personality
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Snow Cover Descriptors for Reptiles and Their Illustrations.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene