INVESTIGATION OF HIGH POWER GASEOUS ELECTRONICS.
Abstract
Equations expressing tube life as a function of initial square root clean-up rate were derived. Validity of these equations was demonstrated by application to actual life test data. The use of thin metallic films to control gas clean-up in quartz tubes was investigated. Preliminary results with argon at room temperature indicate that an order of magnitude reduction in square root clean-up rate can be achieved by using a thin tungsten film as a diffusion barrier. Tungsten film erosion by the discharge was inhibited by the use of a second thin film of either tungsten oxide or silicon dioxide. Data obtained for the sorption of hydrogen in OFHC copper indicate that hydrogen diffuses into the metal bulk at a rapid rate compared with the observed rates for inert gases in quartz. Hydrogen was found to have an activation energy of 5.7K cal/mole for diffusion in OFHC copper. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 24, 1960
- Accession Number
- AD0602724
Entities
People
- H. S. Maddix
- J. Gregory
Organizations
- M/A-COM Technology Solutions