ENGINEERING SERVICES ON TRANSISTORS.
Abstract
The report describes all the technical effort expended in the development of high-frequency, high power germanium transistors. The areas included are: (1) general discussion of the high-frequency transistor development project; (2) design theory for high-frequency germanium power transistors of conventional mesa structure, and for planar interdigitated structures; (3) discussion of developments in planar photoengraved microwave power transistor technology, with a specific fabrication sequence; (4) fabrication technology for an improved coaxial power header designed for microwave transistors; (5) presentation of high-frequency measurements on representative development model transistors with a 1-Gc rf output up to 370 mw; (6) overall summary of work. Although the stated objective requirements were not fully met, significant technical progress was made in planar fabrication technology, high-frequency header design, low-resistance electrical contacts, and power transistor design theory. The 1-watt, 1-Gc objective is believed achievable along the general lines of development pursued in the latter period of this contract. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 28, 1964
- Accession Number
- AD0602746
Entities
People
- E. C. Mener
- J. Kocsis
- Kevin Smith
- R. L. Pritchett
- S. R. Arnold