DEFECT STRUCTURES IN QUENCHED AND ANNEALED GAAS CRYSTALS,

Abstract

Lattice parameter measurements have been made by the Kossel-line technique on quenched gallium arsenide crystals. Samples quenched from temperatures above 1000C showed an increase in lattice parameter. The change with temperature has an enthalpy of 2.0 ev and is attributed to the formation of vacancies. Room-tempera ture annealing of the defects is also shown, and is seen to proceed in several stages. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1964
Accession Number
AD0602801

Entities

People

  • G. L. Pearson
  • H. R. Potts
  • V. G. Macres

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Annealing
  • Elements
  • Enthalpy
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Measurement
  • Metals
  • Post-Transition Metals

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics