THE FIRST CZECHOSLOVAKIAN SEMICONDUCTIVE LASER,
Abstract
Introduced is a laser, operating on the principle of using a gallium arsenide crystal, with transition (transformation) of the type similar to the semiconductor regulators. The laser emits stimulated radiation in near infrared zone (at about 0.85 micron). A GaAs sample was prepared in dimensions of 0.2 x 0.6 mm, submerged in gaseous nitrogen and worked with current pulses of several microns duration; the processing of the crystal and its cultivation was done with optical precision.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 07, 1964
- Accession Number
- AD0602993
Entities
Organizations
- National Air and Space Intelligence Center