HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.
Abstract
The use of high power semiconductor devices for phase shifting in array antennas is considered. The large number of these components in a practical system makes reliability data important. Progress made within the last study interval is reported. This includes the continuation of the life tests through the fifteen hundred hour readings. Data reduction shows that the leakage current has a decreasing failure rate with time, early leakage failures should be screened out by a properly designed burn-in, alternate forward and reverse bias is a more severe test than continuous reverse bias and capacitance variations decrease as frequency increases. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1964
- Accession Number
- AD0603162
Entities
People
- William W. Slavinsky Jr.
Organizations
- M/A-COM Technology Solutions