STUDY OF SURFACE STATES IN SEMICONDUCTORS,
Abstract
The report presents pertinent experimental procedures, results, and discussion of surface states on (111) surfaces of GaAs. For n-type 'undoped' GaAs, pulsed field effect measurements on the B face yield two levels: E1 = 0.56 eV below the conduction band with a capture cross-section of the order of approx 10 to the -12th power sq cm and E2 = 0.13 eV below the conduction band with a capture cross-section for electrons of approx. 10 to the -22 power sq cm. Level E1 appears to be a donor state, whereas E(e) is identified as an acceptor state. The A face yields a distribution of states of energies in the range of 0.2 eV and 0.6 eV below the conduction band. One level, 0.51 below the conduction band with a capture cross-section for electrons of 10 to the -14 power sq cm, agrees within experimental error with the E1 level on the B face. A correlation between surface state activity and dislocation etch pit density is discussed and further studies are outlined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1964
- Accession Number
- AD0603262
Entities
People
- G. Rupprecht
- J. Gilbert