ENGINEERING SERVICES ON TRANSISTORS.
Abstract
This report discusses work on a 6-Gc low-power germanium transistor, the image force dielectric constant for hot electrons in gold n-type silicon Schottky diodes, and aging of silicon resistors. Status of the work on a 6-Gc low-power germanium transistor is reported. Techniques for fabricating the oxide-photoengraved planar structure are evaluated. Results of a computer analysis of effects of header parasitic impedances are presented. Photoelectric measurements of the bias dependence of the potential energy barrier for electrons in gold n-type silicon Schottky diodes show that the value of the image force dielectric constant deduced from direct measurement of the barrier lowering is 12.0 = 0.5, in close agreement with the infrared dielectric constant of silicon, and independent of the applied field for fields between 10,000 volts/cm and 2x100,000 volts/cm. Silicon resistors have been aged 1000 hours at 350C. Values remained within about 1 per cent of initial values. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1964
- Accession Number
- AD0603355
Entities
People
- C. R. Crowell
- D. Kahng
- J. Kocsis
- K. E. Martersteck
- M. P. Lapselter