ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.
Abstract
Rigorous calculations were made of the electron lifetimes in zinc doped GaAs and of the division of holes between the valence band and zinc acceptor states in zinc diffused GaAs diodes. The results allow a calculation of the absolute magnitude of the electron diffusion current which agrees closely with experimental values throughout the temperature range from 77K - 300K. The agreement requires the assumption that the bandgap in the p-region is shrunk by 0.025 eV. An analysis of the activation energy of the integrated intensity of the el emission also lead to the conclusion that the bandgap is shrunk by 0.025 eV. The bandwidth of the edge electro-luminescence as a function of temperature is consistent with the assumption that at low temperatures a considerable part of the radiative recombinations involve holes in an acceptor band about 0.017 eV wide. The quantum efficiency of freshly etched diodes is found to decrease to a limiting value with time during the passage of forward current. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1964
- Accession Number
- AD0603471