INJECTION LASER STUDY.
Abstract
A new method for fabricating GaAs laser diodes with P-P(o)-N structure was developed. The Mn-doped P(o) regions have a range of widths, but only those less than 10 microns wide have lased. Switching into the lasing state was achieved at 77K in the P-P(o)-N diodes, and they also switched from a low-current to a high-current state at room temperature. A theory of the switching speed of P-I-N diodes whose negative resistance arises from light absorbed in the high-resistance region was given for the limiting cases of high and low external circuit impedance.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1964
- Accession Number
- AD0603651
Entities
People
- Frederick Stern
- K. Weiser
- W. P. Dumke
Organizations
- IBM Thomas J. Watson Research Center