PRODUCTION ENGINEERING MEASURE. HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) HIGH SPEED SEMICONDUCTOR SWITCH (GATE).
Abstract
A pilot production facility capable of producing high speed semiconductor switches in accordance with Signal Corps technical specifications is considered. The major problem areas to be overcome in order to achieve the purpose of this program are forward breakover voltage and current on the two-terminal device, forward blocking current on the three-terminal device, and switching speeds, current carrying capabilities, forward anode voltage, and rate of forward voltage rise on both devices. Work performed furing the period 29 February 1964 through 28 May 1964 is covered. Package designs for both devices are discussed, and progress made on assembly methods, gold diffusion, epitaxial, alloy, and moat-etching procedures is reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 28, 1964
- Accession Number
- AD0603660
Entities
People
- B. G. Burlingame
Organizations
- Motorola Mobility