SURFACE FIELD EFFECT DEVICE STUDIES FOR HIGH RESISTIVITY GALLIUM ARSENIDE. PART III: INTEGRATED BANDPASS AMPLIFIER STUDIES,
Abstract
An integrated bandpass amplifier device consisting of a surface field effect transistor placed on the end of a longitudinally vibrating crystal was investigated. The transistor was positioned so that there is little interaction between units besides direct electrical connection. As a result, the device may be characterized as a transistor with the drain permanently connected to one terminal of a crystal with the other crystal terminal floating. Two possible circuits to obtain bandpass amplification were investigated and approximately 25% change in output around resonance was demonstrated. No attempt was made to optimize the selectivity of the device. Detailed measurements on oriented GaAs resonators is presented and, from these measurements, the elastic and piezoelectric constants were calculated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1964
- Accession Number
- AD0603753
Entities
People
- Earl J. Charlson
Organizations
- Carnegie Institute of Technology