ENHANCED BOMBARDMENT INDUCED CONDUCTIVITY STORAGE TARGET FOR MEMORY TUBES.
Abstract
A preliminary analysis was made of the SEBIC data by comparison with models based on barriers formed by metal-to-semiconductor contacts and p-n junctions. The capacitance of the SEBIC layer in the back-biased condition varies in proportion to the inverse of approximately the one-third power of the applied voltage. The volt-ampere characteristic indicates that the reverse current tends to saturate when the applied voltage is of the order of a few volts. These data imply that a barrier region is formed which has a high donor density in the bulk SEBIC dielectric; the data are consistent with those of a barrier produced by graded p-n junctions rather than a metal-to-semiconductor contact. SEBIC layer fabrication techniques were studied. In particular, experiments were conducted to determine the optimum thermal processing time and temperature for fabricating SEBIC layers exhibiting the most sustained change in conductivity for the longest time. X-ray diffraction studies were conducted to determine the nature of the SEBIC layer barrier material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1964
- Accession Number
- AD0605188
Entities
People
- N. H. Lehrer
Organizations
- HRL Laboratories