500 WATT SILICON POWER TRANSISTOR.

Abstract

Results of infra-red heat distribution studies are discussed. Detailed impurity profile design and geometrical mask configurations for the triple-diffused transistor are presented. Partial realization of the designed structure through fabrication work is shown. Models of the encapsulation are displayed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1964
Accession Number
AD0605331

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Coatings
  • Electronic Components
  • Electronic Equipment
  • Encapsulation
  • Fabrication
  • Impurities
  • Microcapsules
  • Transistors

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design