RESEARCH AND INVESTIGATION OF INVERSE EPITAXIAL UHF POWER TRANSISTORS
Abstract
The report describes development work toward a 10 watt 500 Mc silicon npn epitaxial transistor. An extensive design theory permits calculation of important material and geometrical parameters to realize a given performance. Diffusion studies produced a greater understanding of the emitter dip effect, but lacked the control necessary for thin, heavily doped layers. Ion bombardment doping and epitaxial base growth are described; both these methods are promising but require further development. Devices were produced giving up to 7 watts at 500 Mc with 4 db gain. An important device principle, the shorted emitter, is described. Methods of evaluating contact resistance and designing control structures for diffusion evaluation are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1964
- Accession Number
- AD0605376
Entities
People
- A. Goetzberger
- R. M. Scarlett