RESEARCH AND DEVELOPMENT FOR SEMICONDUCTOR SURFACE CONTROL AND STABILIZATION.

Abstract

The report describes the progress made during this period in semiconductor surface control and stabilization. The effects of contaminants upon beta and leakage current are discussed. Germanium planar passivation studies are also covered. Work on metal oxide semiconductors (MOS) and field effect transistors (FET) is reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 14, 1964
Accession Number
AD0605566

Entities

People

  • F. Lee
  • H. W. Cooper
  • K. D. Kang

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Field Effect Transistors
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics