MIXED BISMUTH OXIDE (MBO) TYPE FERRIELECTRICS,
Abstract
As a result of accumulated information, a new family of ferrielectric materials was discovered and the simplest mixed bismuth oxide with a layer-type structure, having the formula Bi4Ti3O12 was found to be a degenerate antiferroelectric material exhibiting a pronounced and stable threshold switching field. This fact establishes the second group of ferrielectrics in the mixed bismuth oxides with a layer-type structure. It is suggested that this new group of ferrielectrics be called 'MBO Type Ferrielectrics.' It was also revealed that this new material exhibits a stable ferrielectric state from nearly 0K up to several hundred degrees centigrade and represents, at present, a material with the widest region of stable ferroelectric behavior. The preparation of these complex crystals, as well as their morphology, is discussed. The result of electrical and optical measurements are presented and the domain structure of the crystals has been determined. Some of the semiconductive properties were studied and the effect of impurities on the threshold and bias fields is presented. A foundation for a theoretical explanation of a number of new phenomena found in ferrielectrics has been laid. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1964
- Accession Number
- AD0605663
Entities
People
- Charles F. Pulvari
Organizations
- The Catholic University of America