DEVELOPMENT OF A TRANSISTOR DELIVERING AN OSCILLATOR OUTPUT OF 250 MILLIWATTS AT 1.5 GIGACYCLES.
Abstract
The development of a 1.5 Gc 1/4 watt transistor was started using germanium which appeared then to be the most promising material. During the first six months of the program, considerable progress was made in the construction of germanium planar transistors although none was able to produce the 1/4 watt at 1.5 Gc. At this time developments in the silicon area seemed to indicate the program should be shifted to silicon as the basic material. Permission was obtained from the Bureau of Ships for this change. In spite of delays in obtaining the masks for the silicon transistor, it was possible to ship 50 of the 100 final devices on the contractual due date and the remaining 50 the following month. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 29, 1964
- Accession Number
- AD0606313
Entities
Organizations
- Texas Instruments