LOW TEMPERATURE VAPOR GROWTH STUDIES.

Abstract

Topics include: room temperature polishing of Ge and GaAs using NaOCl solutions; high temperature etching of Ge with HI; growth rate in the Ge-I2-He-H2 vapor transport system; exitaxial Ge growth in the Ge-C12-H2 system; Bourdon gauge measurements on the GeCl2 system; photochemical etching of Ge and Si with Cl2; optical absorption in several open tube systems; transpiration in the Ga-HI-H2 and Ge-HI-H2 systems; growth of Si single crystals by the H2 reduction of SiCl4.

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1964
Accession Number
AD0606797

Entities

People

  • A. Reisman

Organizations

  • IBM Thomas J. Watson Research Center

Tags

DTIC Thesaurus Topics

  • Absorption
  • Crystals
  • High Temperature
  • Low Temperature
  • Measurement
  • Optical Absorption
  • Polishing
  • Single Crystals
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Materials Science and Engineering.
  • Semiconductor Device Technology