STUDY OF SEMICONDUCTING PROPERTIES OF SELECTED RARE-EARTH METALS AND COMPOUNDS

Abstract

The investigation was concerned with the compounding, crystal growth, characterization, and evaluation of compounds formed between the rare-earth elements and elements of chemical Groups V and VI. Special emphasis is placed on providing basic information to make possible the ultimate development of useful solid-state electronic devices based on these materials. In sampling the members of the rare-earth family, the elements cerium, neodymium, samarium, gadolinium, erbium, and ytterbium were used in the preparation of representative compounds and alloys with anions, such as, selenium, tellurium, oxygen, arsenic, antimony, phosphorus, and nitrogen. Single crystal, bulk, and thin-film specimens were prepared, and details regarding methods of compounding and crystal growth are given. Several applications of rareearth compounds and alloys studied are suggested.

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Document Details

Document Type
Technical Report
Publication Date
Oct 12, 1964
Accession Number
AD0607082

Entities

People

  • F. J. Reid
  • J. F. Miller
  • J. W. Moody
  • L. K. Matson
  • R. C. Himes
  • R. D. Baxter

Organizations

  • Battelle Memorial Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Carrier Mobility
  • Charge Carriers
  • Chemical Synthesis
  • Chemistry
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Energy Bands
  • Free Electrons
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Rare Earth Alloys
  • Rare Earth Elements
  • Semiconductors

Readers

  • Materials Science and Engineering.
  • Surface Engineering/Surface Coating Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene