ACTIVE THIN FILM TECHNIQUES MICROMIN PROGRAM.
Abstract
The purpose of the investigation was to develop a process for depositing device quality silicon and/or germanium films on glazed polycrystalline insulating substrates by vacuum evaporation of silicon and/or germanium and to form thin film diodes and transistors in these films. Deposition of device quality silicon films on substrates coated with a mixture of oxides which are fluid at the deposition temperature was specifically investigated. Development of glaze materials in the system Na2O-MgO-CaO and SiO2 produced materials for the formation of fluid layers on which both n and p type silicon films can be vacuum evaporated. X-ray and electron diffraction analysis have shown that rheotaxial silicon deposits have a preferred (110) orientation and they consist of aggregates of 2 microns with grains of approx. 3000A. Annealing of silicon films increased the grain sizes to 200 microns. X-ray analysis has shown an orientation shift during annealing from preferred (110) to strong (111) orientation. Doping techniques were developed and a mask changer designed making it possible to selectively vacuum deposit silicon films to the geometry and impurity profile necessary to form diodes and transistors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1964
- Accession Number
- AD0607371
Entities
People
- Egons Rasmanis
- Robert Tiernan
- Rosemary Beatty
Organizations
- Sylvania Electric Products