FAILURE MECHANISMS IN MICROELECTRONICS.
Abstract
Investigations were performed on three types of microelectronic devices: multiple diode wafers, inversion layer diode amplifiers, and versatile linear amplifiers. Two failure mechanisms were identified and studied in detail: unsuspected diffusion barriers from photoetch procedures, and variations in passivation layer properties. The relationship to these, of current amplification (beta), or reverse voltage breakdown, of leakage, and other quantities was examined. Each step in microelectronic device fabrication was investigated for its contribution to failure mechanisms. A partially conducting region in the passivating oxide was identified and studied, 300 =100 A from the silicon. This contributes to the leakage in microelectronic devices usually attributed entirely to channels in the silicon. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1964
- Accession Number
- AD0607426