AN INVESTIGATION OF A P-INDUCED CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTOR.
Abstract
The analysis and use of the p-induced channel insulatedgate field-effect transistor (P-ICFET) were investigated. A simplified charge distribution analysis and the experimental determination of the figures of merit, gain-bandwidth and power gain, were utilized to predict the operation of the P-ICFET in the RF range. A shortcircuit admittance parameter equivalent model which was modified to include regenerative effects was completed with the subsequent design and construction of an 100 mc/s amplifier and oscillator. The typical P-ICFET amplifier exhibited a power gain of 8-15 db and as an oscillator had a power output of 2-4 milliwatts at an efficiency of 20-40%. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1964
- Accession Number
- AD0607483
Entities
People
- Kevin Grant Stogsdill
Organizations
- Air Force Institute of Technology