SECONDARY BREAKDOWN, RADIATION RESISTANCE AND FREQUENCY RESPONSE OF SILICON TRANSISTORS,

Abstract

This report points out the considerations that have to be taken into account when choosing a transistor which has good neutron radiation resistance and, in addition, secondary breakdown performance. There appears to be a point where optimum performance is obtained considering both requirements. However, the representation indicated can only be considered a static case since secondary breakdown is itself dependent on the amount of neutron exposure the device receives. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1964
Accession Number
AD0607561

Entities

People

  • Bernard Reich
  • Edward B. Hakim

Organizations

  • United States Army Communications-Electronics Command

Tags

DTIC Thesaurus Topics

  • Frequency
  • Frequency Response
  • Radiation
  • Radiation Resistance
  • Resistance
  • Transistors

Fields of Study

  • Physics

Readers

  • Approximation Theory.
  • Electrical Engineering
  • Solar Physics