THE RELATIONSHIP BETWEEN TRANSISTOR SECONDARY BREAKDOWN PERFORMANCE TO VHF LARGE SIGNAL AMPLIFIER PERFORMANCE,
Abstract
An attempt has been made to find a relationship between transistor secondary breakdown as noted at low fre quencies with the performance of transistors as VHF large signal amplifiers. The study tends to indicate that if secondary breakdown limits the performance of r.f. power transistors, the maximum power output of the device is limited by the d.c. operating point at which secondary breakdown occurs. Upon visual inspection of units destroyed in these experiments, it has been found that consistent metalization failures have occurred in the vicinity of the emitter lead and that failures noted under r.f. conditions have been much more severe than those noted under d.c. burnout conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1964
- Accession Number
- AD0607566
Entities
People
- Bernard Reich
- Edward B. Hakim
Organizations
- United States Army Communications-Electronics Command