PROJECTION PHOTOLITHOGRAPHY FOR USE IN MICROCIRCUIT FABRICATION,
Abstract
A new photographic technique for use in the construction of photo and process masks is discussed. The projection writing technique was used to produce various masks which are comparable in characteristics and quality to those currently being made via contact and other photographic techniques within the microelectronic industry. The zero velocity writing method produced process mask patterns with line boundary definition of less that 5 microns. Rectangular corners of photo masks projected light images having rounded corners with radii of less than 10 microns. Exposure time intervals of 2.0 to 4.0 seconds were used to produce complex micro-circuit-type photo masks using one-step reduction factors of 4.0 to 22.0. Writing velocities of 6.0 to 0.25 millimeters per second produced useful photo mask forms upon high resolution plates. Maximum dimension tolerance obtained in experimental writing was = 0.005 inches. Analysis shows that maximum dimensional tolerance of = 5.0 microns is possible to achieve for the one-step writing method. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1964
- Accession Number
- AD0607594
Entities
People
- Albert Mark
- Sidney Marshall
- Thomas F. Brooks
- William B. Glendinning
Organizations
- United States Army Communications-Electronics Command