STUDY OF INTERACTION STRUCTURES LEADING TO DEVELOPMENT OF X-BAND CROSSED-FIELD AMPLIFIER, PHASE I.
Abstract
A fenced line formed by photo-engraving of copper on a support of polished sapphire was selected as the delay line structure giving the most promise. The technology for the photoformed line on sapphire was proven using an intermediate layer of titanium to bond the copper to the support, photo-etching, then subsequent thickening by copper plating. Cold testing of S-band scale models indicated that the dissymmetric fenced line is advantageous in terms of suppressing unwanted modes, but is more dispersive than would be desired and interacts with only the center part of the beam. Attempts to eliminate surface roughness of ceramic base materials by glazing has not yet yielded satisfactory deposition of delay lines. Improved ceramics are being sought. Measurements verified the published values of thermal conductivity for beryllia and have shown that the sapphire support is at best marginal for the 2 kw output required. An overall tube design with a gridded gun for noise reduction is outlined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 28, 1964
- Accession Number
- AD0607752