ELECTRON-BOMBARDMENT DAMAGE IN SILICON SOLAR CELLS.
Abstract
A study was made of the radiation damage in 11 types of silicon solar cells as a result of 1-Mev electron bombardment. Included in the study are p/n cells, n/p cells of different bulk resistivities, planar cells, and drift-field cells. A comparative analysis was made of the radiationinduced degradation in these cells as a function of shortcircuit current, maximum power output, minority-carrier diffusion length, and photovoltaic spectral response. The p/n cells were found to be much more sensitive to radiation damage than any type of n/p cells in this investigation. In th n/p cells, there is a definite indication of increasing radiation resistance accompanying increasing values of bulk resistivity, up to 10 ohm-cm. The drift-field solar cells exhibit a further improvement in radiation resistance beyond that of the other types of n/p cells. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 07, 1964
- Accession Number
- AD0608213
Entities
People
- R. L. Statler
Organizations
- United States Naval Research Laboratory