SEMICONDUCTOR MATERIALS.
Abstract
The feasibility of a practical solid state matrix display employing visible low voltage dc injection electroluminescence has been established. Displays consisting of integrated 5 x 7 arrays of square mesa el diodes have been constructed and tested. The resolution of the display is 32 picture elements per inch. They are easily switched and have high contrast. The uniformity is poor, reflecting the non-uniform optical quality of the GaAs-GaP raw material. Control displays fabricated with GaAs have good uniformity. A detailed study of the GaAs(1-x)P (x) alloy system shows that for dc current density of about 25 amperes/cm(2) optimum luminescent output is obtained in the spectral interval between 610 and 680 mu. The output measured under these conditions is found to be between 30 and 500 footlamberts, well in excess of this contract requirements. Although the state-of-the-art GaAs-GaP single crystal ternary alloys needs improvement, especially in optical uniformity, the contract purpose, as stated in Part 1 on page 1 of this report, can be considered accomplished. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 26, 1964
- Accession Number
- AD0608536