PRODUCTION ENGINEERING MEASURE TO IMPROVE PRODUCTION TECHNIQUES AND INCREASE THE RELIABILITY OF THE 2N328A TRANSISTOR.
Abstract
The output of the etch wheel has continued to be monitored by using the daily yield at dry line test box location. Additional furnaces were installed on one side of the proposed line, as well as a two-tier track which will hold more transistor trays. The oxygen analyzer is presently being used to monitor the gas at three locations in the final assembly line. More aluminum evaporated units were fabricated. The best slices gave good 2N328A yield as well as a more than adequate BV sub CEO sort yield. Devices made from evaporated slices with smaller emitters and collectors gave lower yields. The reason for this problem is not yet known. A few grounded collector units were made using an epitaxially deposited junction and an n+ ring to allow an aluminum contact to be made for the base. The final test program has been re-evaluated. Because of the possible occurrence of a different mode of failure at higher power levels, the long term failure tests will be conducted at 400 mw, 450 mw, and 500 mw. Derating curves will be used to establish the power levels of operation for the low failure rates of 0.05%/1000 hours at a 90% confidence level. An Inspections and Quality Control Plan has been submitted and approved. A proposed specification for High Reliability Transistor Type 328A and 329A has been submitted and is here enclosed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1964
- Accession Number
- AD0608583
Entities
People
- R. R. Rau
Organizations
- National Semiconductor