RADIATION EFFECTS IN SEMICONDUCTORS: (SUMMARY REPORT, JUNE, 1964).
Abstract
The first part of the report contains information of use to persons engaged in irradiation experiments involving electrons or protons with energies between 0 and 400 KeV. Range energy curves for these particles based on a critical review of the literature are presented. A circuit for stabilizing the output voltage and current of a Van De Graaff machine is described. The results of a calibration of the machine based on a p, gamma reaction are presented. The second section describes radiation damage experiments in GaAs based on studies of changes in recombination radiation induced by electron beam injection. The third section is concerned with an experiment designed to demonstrate the existence of a photovoltage between two parts of a semiconductor with different lifetimes, the lifetime difference having been produced by irradiation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1964
- Accession Number
- AD0608612
Entities
People
- J. J. Loferski
Organizations
- Brown University