PN JUNCTION FORMATION TECHNIQUES.
Abstract
The report describes investigations on the fabrication of silicon single-crystal cells by ion implantation techniques and thin-film cells by plasma deposition techniques. N on P cell efficiencies were raised to the 13% level through improvements in the implantation process, subsequent heat treatment, and contacting. Control of the junction characteristics and therefore cell spectral response through the inherent control of the implantation technique was conclusively demonstrated. Plasma deposition as a process was studied in detail. Much of the program involved investigations with source feed gases (silicon halides) which were incompatible with formation of semiconductor grade films by this process. Experiments with silicon hydride resulted in functional (low resistivity, doped, highly crystalline, low impurity level) films on foreign substrates (molybdenum and quartz), thereby demonstrating the basic tenets of the plasma deposition process.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1964
- Accession Number
- AD0608636